IXSH45N120B Datasheet (IXYS) - High Voltage IGBT

IXSH45N120B, High Voltage IGBT

High Voltage IGBT IXSH 45N120B IXST 45N120B "S" Series - Improved SCSOA Capability IC25 VCES VCE(sat) = 75 A = 1200 V = 3.0 V Preliminary data Symbol V CES VCGR VGES VGEM IC25 I C90 ICM SSOA (RBSOA) tSC Test Conditions Maximum Ratings T J = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient 1200 1200 ±20 ±30 TC = 25°C (limited by leads) T C = 90°C TC = 25°C, 1 ms 75 45 180 VGE= 15 V, TJ = 125°C, RG = 5 W Clamped inductive load ICM = 90 @ 0.8 V CES TJ = 125°C,

IXSH45N120B Features

* Epitaxial Silicon drift region - fast switching - small tail current

* MOS gate turn-on for drive simplicity Applications

* AC motor speed control

* DC servo and robot drives

* Uninterruptible power supplies (UPS)

* Switched-mode and resonant-mode po