IXSH45N100 Datasheet (IXYS Corporation) - Low VCE(sat) IGBT

IXSH45N100, Low VCE(sat) IGBT - Short Circuit SOA Capability

www.DataSheet4U.com Low VCE(sat) IGBT IXSH 45N100 IXSM 45N100 VCES IC25 VCE(sat) = 1000 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 2.7 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 0.6 VCES, TJ = 125°C RG = 22 W, non repetitive T

IXSH45N100 Features

* International standard packages

* Guaranteed Short Circuit SOA capability

* Low VCE(sat) - for low on-state conduction losses

* High current handling capability

* MOS Gate turn-on - drive simplicity BVCES VGE(th) ICES IGES VCE(sat) IC IC = 3 mA, VGE = 0 V