IXSH40N60 - High Speed IGBT

Datasheet Details

G = Gate E = Emitter TAB = Collector G E (TAB) (TAB) G C E TO-247 AD (IXSH) TO-268 (D3) ( IXST) 1.13/10 Nm/lb. in. 6 300 g °C Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = 125°C 7 25 1 ±100 2.2 V V mA mA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 mA, VGE = 0 V = 4 mA, VCE = VGE VCE = 0.8.
VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V IXYS reserves the right to change limits, test con.

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Published: Apr 5, 2005 |