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IXGX32N170H1 - High Voltage IGBT

Features

  • z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage IGBT with Diode Advance Technical Information IXGX 32N170H1 VCES IC25 VCE(sat) tfi(typ) = 1700 V = 75 A = 3.3 V = 290 ns Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient 1700 1700 ±20 ±30 TC = 25°C TC = 90°C TC = 25°C, 1 ms 75 32 200 VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load ICM = 90 @ 0.8 VCES TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω 10 V V V V A A A A µs PC TC = 25°C TJ TJM Tstg 350 -55 ... +150 150 -55 ... +150 W °C °C °C FC Mounting force with chip 22...130/5...30 N/lb Maximum lead temperature for soldering 1.6 mm (0.062 in.
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