IXGT24N170AH1 Datasheet - IXYS

IXGT24N170AH1 High Voltage IGBT

High Voltage IGBTs w/Diode Preliminary Technical Information IXGH24N170AH1 IXGT24N170AH1 VCES = IC25 = VCE(sat) ≤ tfi(typ) = 1700V 24A 6.0V 40ns TO-247 (IXGH) Symbol VCES VCGR VGES VGEM IICC2950 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions Maximum Ratings TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 1700 1700 ± 20 ± 30 V V V V TTCC = 25°C = 90°C TC = 25°C, 1ms 24 16 75 VCGlaEm=p1e5dVI,nTdVuJc=tiv1e25L°oCa,dRG = 10Ω 0.I8CM

IXGT24N170AH1 Features

* z Optimized for Low Conduction and Switching Losses z Anti-Parallel Ultra Fast Diode z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Welding Machines © 2009 IXYS CORPORATION, A

IXGT24N170AH1 Datasheet (219.98 KB)