IXGT24N60CD1 Datasheet - IXYS Corporation

IXGT24N60CD1 HiPerFAST IGBT

HiPerFASTTM IGBT with Diode Lightspeed Series Preliminary data IXGH 24N60CD1 VCES = 600 V = 48 A IXGT 24N60CD1 IC25 VCE(sat) = 2.5 V www.DataSheet4U.com Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 48 24 80 ICM = 48 @ 0.8 VCES 150 -55 +150 150 -55 +150 300 V V V V A A A A TO-268 (IXG.

IXGT24N60CD1 Features

* International standard packages JEDEC TO-247 and surface mountable TO-268

* High frequency IGBT

* High current handling capability

* Latest generation HDMOSTM process

* MOS Gate turn-on - drive simplicity

* Fast recovery expitaxial Diode (FRED) - sof

IXGT24N60CD1 Datasheet (138.06 KB)