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IXGN50N120C3H1 - High-Speed PT IGBT

IXYS

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Datasheet Details

Part number	IXGN50N120C3H1
Manufacturer	IXYS
File Size	296.27 KB
Description	High-Speed PT IGBT
Datasheet	IXGN50N120C3H1-IXYS.pdf

IXGN50N120C3H1 Product details

Features

z z z z z z V V V V A A A A A Ec G Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load TC = 25°C Mounting Torque Terminal Connection Torque Optimized for Low Switching Losses Square RBSOA High Current Capability Isolation Voltage 2500V~ Anti-Parallel Ultra Fast Diode International Standard Package Advantages z z High Power Density Low Gate Drive Requirement.

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Published: May 20, 2014 |