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IXGN50N60B - HiPerFASTTM IGBT

IXYS Corporation

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Datasheet Details

Part number	IXGN50N60B
Manufacturer	IXYS Corporation
File Size	125.74 KB
Description	HiPerFASTTM IGBT
Datasheet	IXGN50N60B_IXYSCorporation.pdf

IXGN50N60B Product details

Features

International standard package SOT-227B.
Aluminium nitride isolation - high power dissipation.
Isolation voltage 3000 V~.
Very high current, fast switching IGBT.
Low VCE(sat) for minimum on-state conduction losses.
MOS Gate turn-on drive simplicity.
Low collector-to-case capacitance (< 50 pF).
Low package inductance (< 5 nH) - easy to drive and to protect.

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Published: Jul 18, 2008 |