Datasheet4U.com

IXGN200N60B - IGBT

IXYS Corporation

📥 Download Datasheet

IXGN200N60B Datasheet Preview — Preview of IXGN200N60B PDF

datasheet Preview Page 2

Datasheet Details

Part number	IXGN200N60B
Manufacturer	IXYS Corporation
File Size	67.94 KB
Description	IGBT
Datasheet	IXGN200N60B_IXYSCorporation.pdf

IXGN200N60B Product details

Features

International standard package miniBLOC.
Aluminium nitride isolation - high power dissipation.
Isolation voltage 3000 V~.
Very high current, fast switching IGBT.
Low VCE(sat) - for minimum on-state conduction losses.
MOS Gate turn-on - drive simplicity.
Low collector-to-case capacitance (< 50 pF).
Low package inductance (< 5 nH) - easy to drive and to protect.

📁 IXGN200N60B Similar Datasheet

IXGN200N60B3 - Medium-Speed Low-Vsat PT IGBT (IXYS)
IXGN200N60A2 - IGBT (IXYS)
IXGN200N170 - High Voltage IGBT (IXYS)
IXGN100N170 - High Voltage IGBT (IXYS)
IXGN120N60A3 - IGBT (IXYS)
IXGN120N60A3D1 - IGBT (IXYS)
IXGN320N60A3 - 600V IGBT (IXYS)
IXGN400N30A3 - 300V IGBT (IXYS)

Other Datasheets by IXYS Corporation

IXGN200N60 - HiPerFAST IGBT
IXGN200N60A - HiPerFAST IGBT
IXGN50N60B - HiPerFASTTM IGBT
IXGN50N60BD2 - HiPerFAST IGBT
IXGN50N60BD3 - HiPerFAST IGBT
IXGN60N60 - Ultra-Low VCE(sat) IGBT

Published: Apr 5, 2005 |