IXFT32N50Q - Power MOSFET

Datasheet Details

z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 100 1 0.16 V z z z VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 uA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 z V nA µA mA Ω IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Unclamped Inductive.

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Published: Apr 24, 2010 |