IXFT30N40Q - Power MOSFET

Datasheet Details

l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 400 2.0 4.0 ± 100 TJ = 25°C TJ = 125°C 25 1 0.16 V V nA mA mA W l l l VDSS VGS(th) I GSS I DSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V l IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS).

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Published: Apr 24, 2010 |