IXFP20N50P3M Datasheet - IXYS

IXFP20N50P3M Power MOSFET

Preliminary Technical Information Polar3TM HiperFETTM Power MOSFET IXFP20N50P3M VDSS = ID25 = RDS(on)  500V 8A 300m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature fo.

IXFP20N50P3M Features

* Plastic Overmolded Tab for Electrical Isolation

* Fast Intrinsic Rectifier

* Avalanche Rated

* Low RDS(ON) and QG

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

IXFP20N50P3M Datasheet (161.52 KB)

IXFP20N50P3M Datasheet Preview — Preview of IXFP20N50P3M PDF

Datasheet Details

Part number:

IXFP20N50P3M

Manufacturer:

IXYS

File Size:

161.52 KB

Description:

Power mosfet.

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IXFP20N50P3M Power MOSFET IXYS

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