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IXFK88N30P - PolarHT HiPerFET Power MOSFET

Download the IXFK88N30P datasheet PDF. This datasheet also covers the IXFH88N30P variant, as both devices belong to the same polarht hiperfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z z 1.6 mm (0.062 in. ) from case for 10 s Mounting torque TO-247 TO-264 300 z 1.13/10 Nm/lb. in. 6 10 g g International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH88N30P_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFK88N30P Polar HiPerFET Power MOSFET IXYS Corporation
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IXFK100N25 Power MOSFET IXYS Corporation
IXFK102N30P Polar MOSFETs IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFK80N20 Power MOSFETs
IXFK80N20Q Power MOSFETs Q-Class
IXFK80N50P PolarHV HiPerFET Power MOSFET
IXFK80N50Q3 Power MOSFET
IXFK80N65X2 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Preliminary Data Sheet IXFH 88N30P IXFK 88N30P VDSS ID25 www.DataSheet4U.com RDS(on) trr = 300 V = 88 A = 40 mΩ ≤ 200 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Transient Continuous TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 300 300 ± 20 ± 30 88 75 220 60 60 2.0 10 600 -55 ... +150 150 -55 ...
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