IXFK80N20 Datasheet - IXYS

IXFK80N20 Power MOSFETs

www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 72N20 80N20 72N20.

IXFK80N20 Features

* International standard packages

* Molding epoxies meet UL 94 V-0 flammability classification

* Low RDS (on) HDMOSTM process

* Unclamped Inductive Switching (UIS) rated

* Fast intrinsic rectifier Applications Symbol Test Conditions Characteristic Values (TJ

IXFK80N20 Datasheet (123.89 KB)