Datasheet Details
- Part number
- IXFJ32N50Q
- Manufacturer
- IXYS
- File Size
- 119.97 KB
- Datasheet
- IXFJ32N50Q_IXYS.pdf
- Description
- Power MOSFET
IXFJ32N50Q Description
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol VDSS VDG.IXFJ32N50Q Features
* Low profile, high power packageIXFJ32N50Q Applications
* G = Gate, S = Source, D = Drain, TAB = Drain G D S é (TAB) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ±100 TJ = 25°C TJ = 125°C 100 1 0.15 V V nA mA mA W
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