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IXFJ36N30 Power MOSFET

IXFJ36N30 Description

ADVANCE TECHNICAL INFORMATION HiPerFETTM N-Channel Enhancement Mode IXTJ 36N20 VDSS = 200 ID25 = RDS(on) = V 36 A 70 mΩ trr < 200 ns Symbol VDSS .

IXFJ36N30 Features

* G = Gate, S = Source, D = Drain, TAB = Drain G D S é (TAB)
* International standard package
* Low R HDMOS process
* Rugged polysilicon gate cell structure
* High commutating dv/dt rating
* Fast switching times TM DS (on) JEDEC TO-247 AD Mounting torque 1.

IXFJ36N30 Applications

* Switch-mode and resonant-mode Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2 4 ±100 TJ = 25°C TJ = 125°C 25 250 V V nA µA µA Advantages VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, V

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Datasheet Details

Part number
IXFJ36N30
Manufacturer
IXYS
File Size
99.87 KB
Datasheet
IXFJ36N30_IXYS.pdf
Description
Power MOSFET

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