IXFJ36N30 Datasheet (IXYS)

IXFJ36N30, Power MOSFET

ADVANCE TECHNICAL INFORMATION HiPerFETTM N-Channel Enhancement Mode IXTJ 36N20 VDSS = 200 ID25 = RDS(on) = V 36 A 70 mΩ trr < 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 200 200 ± 20 ± 30 36 144 36 19 5 300 -55 +150 150 -55

IXFJ36N30 Features

* G = Gate, S = Source, D = Drain, TAB = Drain G D S é (TAB)

* International standard package

* Low R HDMOS process

* Rugged polysilicon gate cell structure

* High commutating dv/dt rating

* Fast switching times TM DS (on) JEDEC TO-247 AD Mounting torque 1.