IXFJ13N50 Datasheet (IXYS)

IXFJ13N50, Power MOSFET

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFJ 13N50 VDSS ID (cont) RDS(on) trr = 500 = 13 = 0.4 £ 250 V A W ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 500 500 ±20 ±30 13 5

IXFJ13N50 Features

* Low profile, high power package

* Long creep and strike distances

* Easy up-grade path for TO-220 designs

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package induct