IXFH36N60P Datasheet (IXYS)

IXFH36N60P, Power MOSFET

Advance Technical Information www.DataSheet4U.com PolarHV HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Preliminary Data Sheet TM IXFH 36N60P IXFT 36N60P IXFK 36N60P VDSS ID25 RDS(on) t rr = 600 V = 36 A ≤ 190 mΩ ≤ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25

IXFH36N60P Features

* D = Drain Tab = Drain Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±200 100 1000 190 V V nA µA µA mΩ z z z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID