IXFH30N60P - Power MOSFET

Datasheet Details

z Fast Recovery diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect DS99316(06/05) © 2005 IXYS All rights reserved IXFH 30N60P IXFV 30N60P IXFV 30N60PS IXFT 30N60P Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 15 27 4000 VGS = 0 V, VDS = 25 V, f = 1 MHz 430 42 29 VGS = 10 V, VDS = 0.5 ID25 RG = 4 Ω (External) 20 80 25 145 VGS = 10 V, VDS = 0.5 VDSS, ID =.

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Published: Jun 12, 2010 |