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IXFH17N80Q, IXFT17N80Q HiPerFET Power MOSFET

IXFH17N80Q Description

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IXFH 17N80Q IXFT 17N80Q VDSS ID25 RDS(on) = 800 V =.

IXFH17N80Q Features

* z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 800 2.0 4.5 ±100 25 1 0.60 V V nA µA mA Ω z z z IXY

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This datasheet PDF includes multiple part numbers: IXFH17N80Q, IXFT17N80Q. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXFH17N80Q, IXFT17N80Q
Manufacturer
IXYS
File Size
582.17 KB
Datasheet
IXFT17N80Q_IXYS.pdf
Description
HiPerFET Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IXFH17N80Q, IXFT17N80Q.
Please refer to the document for exact specifications by model.

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HiPerFET Power MOSFET IXYS
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