Datasheet Details
Part number:
IXBX55N300, IXBK55N300
Manufacturer:
IXYS
File Size:
1.81 MB
Description:
Monolithic bipolar mos transistor.
Note:
This datasheet PDF includes multiple part numbers: IXBX55N300, IXBK55N300.
Please refer to the document for exact specifications by model.
IXBX55N300, IXBK55N300, Monolithic Bipolar MOS Transistor
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK55N300 IXBX55N300 Symbol VCES VCGR VGES V GEM IC25 I C110 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM T stg TL Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 V 3000 V ±25 V ±35 V TC = 25°C (Chip Capability) T = 110°C C TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 2 Clamped Inductive Load 130 A 55 A 600 A ICM = 110 A 1500 V VGE = 15V,
IXBX55N300 Features
* High Blocking Voltage
* International Standard Packages
* Low Conduction Losses
* High Current Handling Capability
* MOS Gate Turn-On - Drive Simplicity Advantages
* Easy to Mount
* Space Savings
* High Power Density Applications
* Uninterruptible Power Supplies
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