The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Advance Technical Information
www.DataSheet4U.com
High Current Mega MOSTMFET
N-Channel Enhancement Mode
IXTK 128N15
VDSS ID25
RDS(on)
= 150 V = 128 A = 15 mΩ
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 150 150 ± 20 ± 30 128 75 512 90 60 2.5 5 540 -55 ... +150 150 -55 ...
IXTK128N15 Datasheet
