IXSR40N60CD1 Datasheet - IXYS Corporation

IXSR40N60CD1 IGBT

IGBT with Diode ISOPLUS247TM (Electrically Isolated Backside) Short Circuit SOA Capability Preliminary data www.DataSheet4U.com Symbol IXSR 40N60CD1 VCES IC25 VCE(SAT) tfi(typ) = 600 = 62 = 2.5 = 70 V A V ns Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, limited by leads TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 W, non repetitive TC = 25°C Maxi.

IXSR40N60CD1 Features

* DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity 50/60 Hz, RMS t = 1 min 2500 300 Maximum lead temperature for soldering 1.6 mm (0.062

IXSR40N60CD1 Datasheet (68.72 KB)