IXSR40N60BD1 Datasheet (IXYS Corporation)

IXSR40N60BD1, IGBT

Advanced Technical Information IGBT with Diode ISOPLUS 247TM Short Circuit SOA Capability IXSR 40N60BD1 (Electrically Isolated Backside) VCES IC25 VCE(sat) tfi(typ) = 600 = 70 = 2.2 = 120 V A V ns Symbol www.DataSheet4U.com VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg VISOL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30

IXSR40N60BD1 Features

* DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity G = Gate, E = Emitter C = Collector, G C ISOPLUS 247TM E 153432 E Isolated backside