IXSR35N120BD1 Datasheet (IXYS Corporation)

IXSR35N120BD1, IGBT

IGBT with Diode ISOPLUS 247TM Short Circuit SOA Capability IXSR 35N120BD1 (Electrically Isolated Backside) VCES IC25 VCE(sat) tfi(typ) = 1200 V = 70 A = 3.6 V = 180 ns Symbol www.DataSheet4U.com Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µH VGE= 15 V, VCE = 720 V, TJ = 125°C RG = 22 Ω, non repetitive TC = 25°C IGBT Diode Maximum Ratings 1200 1200

IXSR35N120BD1 Features

* z z z z VCES VCGR ISOPLUS 247TM E 153432 VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg VISOL G C E Isolated backside

* G = Gate, E = Emitter C = Collector,

* Patent pending 50/60 Hz, RMS t = 1 min leads-to housing 2500 300 5 Maximum lead temperature for solderi