IXGN82N120C3H1 - High-Speed PT IGBT

IXYS Corporation

Datasheet Details

Part number	IXGN82N120C3H1
Manufacturer	IXYS Corporation
File Size	170.28 KB
Description	High-Speed PT IGBT
Datasheet	IXGN82N120C3H1-IXYSCorporation.pdf

z z z z z z V V V V A A A A A Ec G Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load TC = 25°C Mounting Torque Terminal Connection Torque Optimized for Low Switching Losses Square RBSOA High Current Capability Isolation Voltage 2500 V~ Anti-Parallel Ultra Fast Diode International Standard Package Advantages z z High Power Density Low Gate Drive Requirement Symbol Test Condition.

📁 IXGN82N120C3H1 Similar Datasheet

Other Datasheets by IXYS Corporation

Published: Jun 5, 2014 |