IXFX73N30Q Datasheet - IXYS Corporation

IXFX73N30Q Power MOSFET

HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque (TO-264) PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, V.

IXFX73N30Q Features

* l IXYS advanced low Qg process l Low gate charge and capacitances - easier to drive - faster switching l International standard packages l Low RDS (on) l Rated for unclamped Inductive load switching (UIS) rated l Molding epoxies meet UL 94 V-0 flammability classification Applications l DC-DC convert

IXFX73N30Q Datasheet (98.32 KB)