IXFX20N120P Datasheet - IXYS Corporation

IXFX20N120P Power MOSFET

PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK20N120P IXFX20N120P D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1200 V 1200 V  30 V  40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C 20 A 50 A 10 A 1 J IS  IDM, VDD  VDSS, TJ  150C TC = 25C 15 78.

IXFX20N120P Features

* Fast Intrinsic Diode

* Dynamic dv/dt Rating

* Avalanche Rated

* Low RDS(ON) and QG

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Converters

* D

IXFX20N120P Datasheet (2.01 MB)

IXFX20N120P Datasheet Preview — Preview of IXFX20N120P PDF

Datasheet Details

Part number:

IXFX20N120P

Manufacturer:

IXYS Corporation

File Size:

2.01 MB

Description:

Power mosfet.

📁 Related Datasheet

IXFX20N120 HiPerFET Power MOSFETs (IXYS Corporation)

IXFX200N10P Polar HiPerFET Power MOSFET (IXYS)

IXFX210N17T GigaMOS Power MOSFET (IXYS)

IXFX21N100F Power MOSFET (IXYS Corporation)

IXFX21N100Q HiPerFET Power MOSFET (IXYS)

IXFX220N15P Polar Power MOSFET HiperFET (IXYS Corporation)

IXFX220N17T2 GigaMOS TrenchT2 HiperFET Power MOSFET (IXYS Corporation)

TAGS

IXFX20N120P Power MOSFET IXYS Corporation

IXFX20N120P Distributor