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IXFX200N10P - Polar HiPerFET Power MOSFET

IXYS

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Datasheet Details

Part number	IXFX200N10P
Manufacturer	IXYS
File Size	132.03 KB
Description	Polar HiPerFET Power MOSFET
Datasheet	IXFX200N10P_IXYS.pdf

IXFX200N10P Product details

Features

z z C = Collector Tab = Collector z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z RDS(on) VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 400A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Easy to mount Space savings High power density DS99239B(03/05) © 2005 IXYS All rights reserved IXFK 200N10P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 60.

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Published: Jun 6, 2010 |