Datasheet Details
Part number:
IXFX120N25, IXFK120N25
Manufacturer:
IXYS
File Size:
119.32 KB
Description:
Hiperfet power mosfets.
Note:
This datasheet PDF includes multiple part numbers: IXFX120N25, IXFK120N25.
Please refer to the document for exact specifications by model.
IXFX120N25, IXFK120N25, HiPerFET Power MOSFETs
Advance Technical Information www.DataSheet4U.com HiPerFETTM Power MOSFETs Single MOSFET Die IXFX 120N25 IXFK 120N25 VDSS ID25 RDS(on) = 250 V = 120 A = 22 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC TC TC TC = 25°C (MOSFET chip capability) = 104°C (External lead capability) = 25°C, pulse width limited by TJM = 25°C Maximum Ratings 250 250 ±
IXFX120N25 Features
* l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless
📁 Related Datasheet
📌 All Tags
