IXFR58N20Q Datasheet - IXYS Corporation

IXFR58N20Q HiPerFET Power MOSFETs

HiPerFETTM Power MOSFETs IXFR 58N20Q ISOPLUS247TM Q-Class (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL www.DataSheet4U.net VDSS = = ID25 RDS(on) = 200 V 50 A 40 mΩ trr ≤ 200 ns Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC =.

IXFR58N20Q Features

* z 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 250 2500 5 z z z z Weight z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(

IXFR58N20Q Datasheet (111.86 KB)