IXFR55N50F Datasheet - IXYS Corporation

IXFR55N50F HiPerRF Power MOSFET

HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFR 55N50F VDSS = 500 V ID25 = 55 A RDS(on) = 90 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS .

IXFR55N50F Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z RF capable Mosfets z z Low gate charge and capacitances - easier to drive -faster switching z Low drain to tab capacitance(

IXFR55N50F Datasheet (499.75 KB)