IXFR180N07 Datasheet (IXYS Corporation)

IXFR180N07, HiPerFET Power MOSFETs

HiPerFETTM Power MOSFETs IXFR 180N07 TM ISOPLUS247 (Electrically Isolated Back Surface) Single MOSFET Die Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight www.DataSheet4U.net VDSS = 70 V ID25 = 180 A RDS(on) = 6 mW trr £ 250 ns Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £

IXFR180N07 Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation

* Low drain to tab capacitance(