IXFQ26N60P, IXFV26N60P N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated

IXYS Corporation

Description

Advance AdvanceTechnical TechnicalInformation Information www.DataSheet4U.com PolarHVTM Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode A.

📥 Download Datasheet

IXFQ26N60P Datasheet Preview — This datasheet PDF includes multiple part numbers: IXFQ26N60P, IXFV26N60P. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IXFQ26N60P, IXFV26N60P
Manufacturer: IXYS Corporation
File Size: 269.78 KB
Datasheet: IXFV26N60P_IXYSCorporation.pdf
Description: N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
Note: This datasheet PDF includes multiple part numbers: IXFQ26N60P, IXFV26N60P.
Please refer to the document for exact specifications by model.

Features

* z Fast Recovery diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density DS99435(08/05) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤

IXFQ26N60P Distributors

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IXFV26N60P N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXYS Corporation

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