IXFQ24N50P2 Datasheet - IXYS Corporation

IXFQ24N50P2 Power MOSFET

Advance Technical Information PolarP2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFQ24N50P2 VDSS ID25 RDS(on) trr(typ) = = ≤ ≤ 500V 24A 270mΩ 200ns TO-3P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C .

IXFQ24N50P2 Features

* z z z z Avalanche Rated Fast Intrinsic Diode Dynamic dv/dt Rated Low Package Inductance Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque 300 260 1.13/10 5.5 Advantages High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25°C, Unles

IXFQ24N50P2_IXYSCorporation.pdf