IXFQ22N60P3, IXFP22N60P3 Datasheet - IXYS Corporation

IXFQ22N60P3 Power MOSFET

Advance Technical Information Polar3TM HiperFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3 VDSS ID25 RDS(on) = 600V = 22A ≤ 360mΩ TO-220AB (IXFP) G DS Tab TO-3P (IXFQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25.

IXFQ22N60P3 Features

* z z z z 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque TO-220 TO-3P TO-247 300 260 1.13 / 10 3.0 5.5 6.0 Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVD

IXFP22N60P3_IXYSCorporation.pdf