IXFP7N80PM Datasheet - IXYS Corporation

IXFP7N80PM Power MOSFET

PolarHVTM HiPerFET Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFP7N80PM VDSS ID25 RDS(on) trr = = ≤ ≤ 800 3.5 1.44 250 V A Ω ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,.

IXFP7N80PM Features

* z 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque 300 260 z z z Md Weight 1.13/10 Nm/lb.in. 3.0 g z Plastic overmolded tab for electrical isolation Fast intrinsic diode International standard package Unclamped Inductive Switching (UIS) rated Low package inductance

IXFP7N80PM_IXYSCorporation.pdf