IXFP3N120, IXFA3N120 HiPerFET Power MOSFETs

IXYS Corporation

Description

www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol VDSS VDGR V.

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IXFP3N120 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXFP3N120, IXFA3N120. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IXFP3N120, IXFA3N120
Manufacturer: IXYS Corporation
File Size: 591.56 KB
Datasheet: IXFA3N120_IXYSCorporation.pdf
Description: HiPerFET Power MOSFETs
Note: This datasheet PDF includes multiple part numbers: IXFP3N120, IXFA3N120.
Please refer to the document for exact specifications by model.

Features

* z 1.13/10 Nm/lb. in. 4 2 g g z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 5.0 ±100 TJ = 25°C TJ = 125°C 50 2 4.5 V V nA µA mA Ω z Low gate charge and capacitances - easier to drive - faster switching International standard p

IXFP3N120 Distributors

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IXFA3N120 HiPerFET Power MOSFETs IXYS Corporation

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