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IXFK88N30P - Polar HiPerFET Power MOSFET

Download the IXFK88N30P datasheet PDF. This datasheet also covers the IXFT88N30P variant, as both devices belong to the same polar hiperfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z z z z z D = Drain Tab = Drain 1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247&TO-264) TO-268 TO-247 TO-264 300 260 1.13/10 4 6 10 International Standard Packages Fast Intrinsic Diode Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 4mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C VGS = 10V, ID =.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFT88N30P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarTM HiPerFETTM Power MOSFET IXFT88N30P IXFH88N30P IXFK88N30P VDSS ID25 trr RDS(on) = = ≤ ≤ 300V 88A 40mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight www.DataSheet4U.net TO-268 (IXFT) G S Tab Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 300 300 ± 20 ± 30 88 75 220 60 2 10 600 -55 to +150 +150 -55 to +150 V V V V A A A A J V/ns W °C °C °C °C °C Nm/lb.in.
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