Download the IXFK88N30P datasheet PDF.
This datasheet also covers the IXFT88N30P variant, as both devices belong to the same polar hiperfet power mosfet family and are provided as variant models within a single manufacturer datasheet.
Features
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D = Drain Tab = Drain
1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247&TO-264) TO-268 TO-247 TO-264
300 260 1.13/10 4 6 10
International Standard Packages Fast Intrinsic Diode Avalanche Rated Low RDS(ON) and QG Low Package Inductance
Advantages
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Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 4mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C VGS = 10V, ID =.