IXFH76N06-11 Datasheet - IXYS Corporation

IXFH76N06-11 Power MOSFET

www.DataSheet.co.kr HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH 76 N06-11 IXFH 76 N06-12 IXFH 76 N07-11 IXFH 76 N07-12 60 V 60 V 70 V 70 V ID25 76 A 76 A 76 A 76 A RDS(on) 11 mW 12 mW 11 mW 12 mW Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 ID119 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Symbol Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 10 kW Continuous Transient TC TC TC TC = 25°C (Chip capability = .

IXFH76N06-11 Features

* q D = Drain, TAB = Drain TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C q W °C °C °C °C g q q q 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 6 q International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gat

IXFH76N06-11 Datasheet (138.80 KB)