IXFH70N15 Datasheet (IXYS Corporation)

IXFH70N15, Power MOSFET

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr Preliminary Data Sheet IXFH 70N15 IXFT 70N15 VDSS ID25 RDS(on) = 150 V = 70 A = 28 mΩ trr ≤ 250ns Symbol V DSS VDGR V GS V GSM ID25 IDM I AR EAR EAS dv/dt P D TJ T JM T stg TL Md Weight Test Conditions T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

IXFH70N15 Features

* z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic Rectifier Symbol Test Conditions (TJ = 25°C, unless otherwise specified)