IXFE24N100 Description
www.DataSheet4U.com HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS d.
IXFE24N100 Features
* Conforms to SOT-227B outline
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS)
rated
* Low package inductance
IXFE24N100 Applications
* DC-DC converters
Mounting torque Terminal connection torque
1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 19 g
Symbol Test Conditions (TJ = 25°C, unless otherwise specified)
VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20V, VGS = 0V VDS = VDSS VGS = 0 V VGS = 10V, I
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