IXFE34N100_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFE36N100, IXFE34N100
Manufacturer:
IXYS Corporation
File Size:
455.93 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXFE36N100, IXFE34N100.
Please refer to the document for exact specifications by model.
IXFE36N100, IXFE34N100, Power MOSFET
www.DataSheet4U.com HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C T C = 25 ° C; TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Note 1 VDSS ID25 RDS(on) 0.24 Ω 0.2
IXFE36N100 Features
* Conforms to SOT-227B outline
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance
* Fast intrinsic Rectifier Applications
* DC-DC converters Mounting t
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