Datasheet4U Logo Datasheet4U.com

IXFE36N100 - Power MOSFET

Download the IXFE36N100 datasheet PDF. This datasheet also covers the IXFE34N100 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Conforms to SOT-227B outline.
  • Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFE34N100_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFE73N30Q Power MOSFET IXYS
IXF18102 10Gbps Physical Layer Device Intel Corporation
IXF18104 10 Gigabit Lan PHY Intel Corporation
IXFA102N15T N-Channel MOSFET INCHANGE
IXFA110N15T2 N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFE34N100 Power MOSFET
IXFE180N10 Power MOSFET
IXFE23N100 Single MOSFET
IXFE24N100 Single MOSFET
IXFE44N60 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C T C = 25 ° C; TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Note 1 VDSS ID25 RDS(on) 0.24 Ω 0.28 Ω IXFE 36N100 1000 V 33 A IXFE 34N100 1000 V 30 A trr ≤ 250 ns Maximum Ratings 1000 1000 ± 20 ± 30 36N100 34N100 36N100 34N100 33 30 144 136 36 64 4 5 580 -55 ... +150 150 -55 ...
Published: |