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IXFB30N120P - Polar HiPerFET Power MOSFET

Features

  • W °C °C °C °C °C N/lb g z z z Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in. ) from case for 10 s Plastic body for 10 s Mounting force 300 260 30..120/7.52.7 10 Advantages z z z Plus 264TM package for clip or spring mounting Space savings High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 1 mA VGS = ±30 V.

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Full PDF Text Transcription

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Preliminary Technical Information PolarVHVTM HiPerFET IXFB30N120P Power MOSFET N-Channel Enhancement Mode VDSS = 1200 V ID25 = 30 A RDS(on) ≤ 350 mΩ ≤ 300 ns trr Symbol VDSS VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 1 Ω TC = 25°C Maximum Ratings 1200 ±30 ±40 30 75 10 60 3 15 1250 -55 ... +150 150 -55 ... +150 V V V A A A mJ J V/ns PLUS264TM (IXFB) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features W °C °C °C °C °C N/lb g z z z Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.
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