IXBL64N250 - Monolithic Bipolar MOS Transistor

IXYS Corporation

Datasheet Details

Part number	IXBL64N250
Manufacturer	IXYS Corporation
File Size	180.16 KB
Description	Monolithic Bipolar MOS Transistor
Datasheet	IXBL64N250-IXYSCorporation.pdf

z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V∼ Electrical Isolation z High Blocking Voltage z Low Switching Losses z High Current Handling Capability z Anti-Parallel Diode Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 1mA, VGE = 0V VGE(th) IC = 4mA, VCE = VGE ICES VCE = 0.8.
VCES, VGE = 0V Note 2, TJ = 125°C IGES VCE = 0V, VGE = ± 25V VCE(sat) IC.

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Published: Jul 28, 2015 |