DSEI8 Datasheet (IXYS Corporation) - Fast Recovery Epitaxial Diode

DSEI8, Fast Recovery Epitaxial Diode

Fast Recovery Epitaxial Diode (FRED) DSEI 8 IFAVM = 8 A VRRM = 600 V trr = 35 ns VRSM V 640 640 VRRM V 600 600 Type A C TO-263 AA DSEI 8-06AS NC A C (TAB) DSEI 8-06A DSEI 8-06AS Symbol IFRMS IFAVM ÿÿx IFRM IFSM Test Conditions TVJ = TVJM TC = 115°C; rectangular, d = 0.5 tP < 10 ms; rep.

rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 16 8 130 100 110 85 95 50 50 36 37 -40+150 150 -40+150 A A A A A A A A2s A2s A2s A2s °C

DSEI8 Features

* International standard package JEDEC TO-220 AC & TO-263 AB Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 q q q q q q q q Symbol Test Conditions typ. TVJ = 25°C TVJ = 25°C TVJ = 125°C IF = 8 A; Characteri