IS66WVC4M16EALL Datasheet (ISSI) - 64Mb Async/Page/Burst CellularRAM

IS66WVC4M16EALL, 64Mb Async/Page/Burst CellularRAM

CellularRAM™ (Trademark of MicronTechnology Inc.) products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications.

The 64Mb DRAM core device is organized as 4 Meg x 16 bits.

This device is a variation of the industry-standard Flash control interface th

IS66WVC4M16EALL/CLL IS67WVC4M16EALL/CLL 64Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC4M16EALL/CLL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits.

The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh.

Both these modes reduce standby current drain.

The device can be operated in a

IS66WVC4M16EALL Features

* Single device supports asynchronous , page, and burst operation

* Mixed Mode supports asynchronous write and synchronous read operation

* Dual voltage rails for optional performance

* ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V

* CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V

* Asynchronous