IS66WVC1M16ALL Datasheet (ISSI) - 16Mb Async/Page/Burst CellularRAM

IS66WVC1M16ALL, 16Mb Async/Page/Burst CellularRAM

CellularRAM™ (Trademark of MicronTechnology Inc.) products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications.

The 16Mb DRAM core device is organized as 1 Meg x 16 bits.

This device is a variation of the industry-standard Flash control interface th

IS66WVC1M16ALL IS67WVC1M16ALL 16Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC1M16ALL and IS67WVC1M16ALL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits.

The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh.

Both these modes reduce standby current drain.

The device can be operated

IS66WVC1M16ALL Features

* Single device supports asynchronous , page, and burst operation

* Mixed Mode supports asynchronous write and synchronous read operation

* Dual voltage rails for optional performance

* VDD 1.7V~1.95V, VDDQ 1.7V~1.95V

* Asynchronous mode read access : 70ns Interpage Read access :