IS61WV6416DALL Datasheet (ISSI) - 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV6416DALL, 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

The ISSI IS61WV6416DAxx/DBxx and IS64WV6416DBxx are high-speed, 1,048,576-bit static RAMs organized as 65,536 words by 16 bits.

It is fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and

IS61WV6416DALL Features

* HIGH SPEED: (IS61/64WV6416DALL/DBLL)

* High-speed access time: 8, 10, 12, 20 ns

* Low Active Power: 135 mW (typical)

* Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV6416DALS/DBLS)

* High-speed access time: 25, 35 ns

* Low Active Power: 5