IS61WV12816DBLS, IS61WV12816DALL - 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Integrated Silicon Solution

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IS61WV12816DBLS Datasheet Preview — This datasheet PDF includes multiple part numbers: IS61WV12816DBLS, IS61WV12816DALL. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	IS61WV12816DBLS, IS61WV12816DALL
Manufacturer	Integrated Silicon Solution
File Size	456.54 KB
Description	128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
Datasheet	IS61WV12816DALL_IntegratedSiliconSolution.pdf
Note	This datasheet PDF includes multiple part numbers: IS61WV12816DBLS, IS61WV12816DALL. Please refer to the document for exact specifications by model.

IS61WV12816DBLS Product details

Description

The ISSI IS61WV12816DAxx/DBxx and IS64WV12816D- Bxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits.It is fabricated using ISSI's high-performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.Easy memory expansion is

Features

HIGH SPEED: (IS61/64WV12816DALL/DBLL).
High-speed access time: 8, 10, 12, 20 ns.
Low Active Power: 135 mW (typical).
Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV12816DALS/DBLS).
High-speed access time: 25, 35 ns.
Low Active Power: 55 mW (typical).
Low Standby Power: 12 µW (typical) CMOS standby.
Single power supply.
Vdd 1.65V to 2.2V (IS61WV12816DAxx).
Vdd 2.4V to 3.6V (IS61/64WV12816DBxx).

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Published: Mar 4, 2010 |